Electroluminescence from Gunn domains in GaAs/AlGaAs heterostructure field-effect transistors.

Electroluminescence from the drain-edge of GaAs/AlGaAs heterostructure metalsemiconductor field-effect transistors under high applied drain bias is observed. The visible light emission is seen through Monte Carlo simulations to be correlated with Gunn domains in the sample, in which the high-field region gives rise to both impact ionization current and the luminescent emission.