2010
Conference Paper
Title

Silicon-interposer with high density Cu-filled TSVs

Abstract
A silicon-interposer technology with high density Cu-filled TSVs and Cu-based redistribution layers was realized. Test structures in a process control module were used for electrical characterization.
Author(s)
Wieland, R.
Zoschke, K.
Jürgensen, N.
Merkel, R.
Nebrich, L.
Wolf, J.
Mainwork
Conference
DOI
Language
English