Infrared spectra and electron spin resonance of vanadium deep level impurities in silicon carbide

Trace impurities of vanadium in Lely-grown silicon carbide single crystals have been detected by their strong, polytype-specific photoluminescence in the 1.3-1.5 mym near-infrared spectral rang, as well as by infrared absorption. A high 0/A high-, and possibly also as a deep donor. The role of vanadium as minority-carrier lifetime killer in SiC-based optoelectronic devices is suggested from these data.