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  4. Analytical model for the influence of the gate-voltage on the forward conduction properties of the body-diode in SiC-MOSFETs
 
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2018
Conference Paper
Title

Analytical model for the influence of the gate-voltage on the forward conduction properties of the body-diode in SiC-MOSFETs

Abstract
In this study, the influence of the gate-source voltage on the forward conduction properties of the body-diode in SiC-MOSFETs is demonstrated experimentally and analyzed by numerical simulations. Thereby, it can be figured out that the conduction properties of the body-diode strongly depend on the operational state of the MOS-capacitor. In depletion case, the current via the body-diode is dominant, whereby in accumulation and inversion mode the current mainly flows through the MOS-channel.
Author(s)
Huerner, A.
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Heckel, T.  orcid-logo
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Enduschat, A.
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Erlbacher, T.  
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Bauer, A.J.
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Frey, L.
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Mainwork
Silicon Carbide and Related Materials 2017  
Conference
International Conference on Silicon Carbide and Related Materials (ICSCRM) 2017  
DOI
10.4028/www.scientific.net/MSF.924.901
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Keyword(s)
  • body-diode

  • gate-voltage

  • MOSFET

  • Silicon Carbide (SiC)

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