• English
  • Deutsch
  • Log In
    Password Login
    or
  • Research Outputs
  • Projects
  • Researchers
  • Institutes
  • Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Konferenzschrift
  4. Analytical model for the influence of the gate-voltage on the forward conduction properties of the body-diode in SiC-MOSFETs
 
  • Details
  • Full
Options
2018
Conference Paper
Titel

Analytical model for the influence of the gate-voltage on the forward conduction properties of the body-diode in SiC-MOSFETs

Abstract
In this study, the influence of the gate-source voltage on the forward conduction properties of the body-diode in SiC-MOSFETs is demonstrated experimentally and analyzed by numerical simulations. Thereby, it can be figured out that the conduction properties of the body-diode strongly depend on the operational state of the MOS-capacitor. In depletion case, the current via the body-diode is dominant, whereby in accumulation and inversion mode the current mainly flows through the MOS-channel.
Author(s)
Huerner, A.
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
Heckel, T.
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
Enduschat, A.
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
Erlbacher, T.
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
Bauer, A.J.
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
Frey, L.
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
Hauptwerk
Silicon Carbide and Related Materials 2017
Konferenz
International Conference on Silicon Carbide and Related Materials (ICSCRM) 2017
Thumbnail Image
DOI
10.4028/www.scientific.net/MSF.924.901
Language
English
google-scholar
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB
Tags
  • body-diode

  • gate-voltage

  • MOSFET

  • Silicon Carbide (SiC)...

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Send Feedback
© 2022