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  4. An SOI MOSFET for circuit simulators considering nonlinear dynamic self-heating
 
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1994
Conference Paper
Title

An SOI MOSFET for circuit simulators considering nonlinear dynamic self-heating

Abstract
Modeling of the self-heating effect in SOI MOSFET's recently led to static and small-signal models of this device. Nevertheless, large-signal models taking into account this effect are not available yet. We fill this gap by presenting a large-signal electrothermal model of the SOI MOSFET for the simulator SPICE. The whole model is formulated as a set of algebraical and partial differential equations which is converted automatically by the model translator MEXEL into SPICE3 netlist. The dynamics of the self-heating process will be shown by several simulations.
Author(s)
Bielefeld, J.
Pelz, G.
Abel, H.B.
Zimmer, G.
Mainwork
International SOI Conference '94. Proceedings  
Conference
International SOI Conference 1994  
DOI
10.1109/SOI.1994.514203
Language
English
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Keyword(s)
  • circuit simulation

  • electric heat

  • metal-oxide-semiconductor FET

  • MOS-Transistor

  • Schaltungssimulation

  • Simulationsmodell

  • Strömungssensor

  • transistor model

  • Transistormodell

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