Investigation of GaN-HEMTs in reverse conduction

This work investigates the reverse conduction characteristics of 600 V-class GaN-HEMTs. The behavior of a conventional HEMT is analyzed and compared to the reverse conduction of an improved HEMT structure with integrated free-wheeling diode. The characteristics of both structures are measured on fabricated test samples. Furthermore, the electrical behavior is analyzed with regards to the intrinsic layouts.