Towards SiC-Based VUV Pin-Photodiodes - Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters

4H-silicon carbide (SiC) based pin photodiodes with a sensitivity in the vacuum ultraviolet spectrum (VUV) demand newly developed emitter doping profiles. This work features the first ever reported 4H-SiC pin photodiodes with an implanted p-emitter and a noticeable sensitivity at a wavelength of 200 nm. As a first step, Aluminum doping profiles produced by low energy ion implantation in 4H-SiC were characterized by secondary-ion mass spectrometry (SIMS). Photodiodes using these shallow emitters are compared to one with a deep p-emitter doping profile employing IV characteristics and the spectral response. SIMS results demonstrate the possibility of shallow Al-implantation profiles using low implantation energies with all emitter profiles featuring characteristic I-V results. For some shallow doping profiles, a measurable signal at the upper limit of the VUV spectrum could be demonstrated, paving the way towards 4H-SiC pin photodiodes with sensitivities for wavelengths below 200 nm.