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May 31, 2023
Journal Article
Title
Towards SiC-Based VUV Pin-Photodiodes - Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters
Abstract
4H-silicon carbide (SiC) based pin photodiodes with a sensitivity in the vacuum ultraviolet spectrum (VUV) demand newly developed emitter doping profiles. This work features the first ever reported 4H-SiC pin photodiodes with an implanted p-emitter and a noticeable sensitivity at a wavelength of 200 nm. As a first step, Aluminum doping profiles produced by low energy ion implantation in 4H-SiC were characterized by secondary-ion mass spectrometry (SIMS). Photodiodes using these shallow emitters are compared to one with a deep p-emitter doping profile employing IV characteristics and the spectral response. SIMS results demonstrate the possibility of shallow Al-implantation profiles using low implantation energies with all emitter profiles featuring characteristic I-V results. For some shallow doping profiles, a measurable signal at the upper limit of the VUV spectrum could be demonstrated, paving the way towards 4H-SiC pin photodiodes with sensitivities for wavelengths below 200 nm.
Author(s)
Project(s)
Technologieentwicklung, Herstellung und Charakterisierung von SiC-basierten (V)UV-Photodioden mit Ionen-implantiertem p-Emitter
Funder
Bundesministerium für Wirtschaft und Klimaschutz -BMWK-