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  4. High-speed and wide-field nanoscale table-top ptychographic EUV imaging and beam characterization with a sCMOS detector
 
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2023
Journal Article
Title

High-speed and wide-field nanoscale table-top ptychographic EUV imaging and beam characterization with a sCMOS detector

Abstract
We present high-speed and wide-field EUV ptychography at 13.5 nm wavelength using a table-top high-order harmonic source. Compared to previous measurements, the total measurement time is significantly reduced by up to a factor of five by employing a scientific complementary metal oxide semiconductor (sCMOS) detector that is combined with an optimized multilayer mirror configuration. The fast frame rate of the sCMOS detector enables wide-field imaging with a field of view of 100 µm × 100 µm with an imaging speed of 4.6 Mpix/h. Furthermore, fast EUV wavefront characterization is employed using a combination of the sCMOS detector with orthogonal probe relaxation.
Author(s)
Eschen, Wilhelm
Liu, Chang
Penagos Molina, Daniel Santiago
Fraunhofer-Institut für Angewandte Optik und Feinmechanik IOF  
Klas, Robert
Fraunhofer-Institut für Angewandte Optik und Feinmechanik IOF  
Limpert, Jens  
Fraunhofer-Institut für Angewandte Optik und Feinmechanik IOF  
Rothhardt, Jan  
Fraunhofer-Institut für Angewandte Optik und Feinmechanik IOF  
Journal
Optics Express  
Open Access
DOI
10.1364/OE.485779
Language
English
Fraunhofer-Institut für Angewandte Optik und Feinmechanik IOF  
Keyword(s)
  • MOS devices

  • Oxide semiconductors

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