Development of rugged 2 GHz power bars delivering more than 100 W and 60% power added efficiency

In this work we systematically study the structural, optical and electrical properties of AlGaN/GaN heterostructures grown by MOCVD 3-inch on SiC substrates Thefinally developed HEMTs demonstrate excellent highvoltage stability, high power performance and large power added efficiencies. For a drain bias of 100 V an output-power-density around 26 W/mm with 25 dB linear gain is obtained. On 36 mm gate width devices an output power beyond 100 W is achieved with a power added efficiency above 60% and a linear gain around 17 dB. Ruggedness on these large devices is proven by successfully passing harsh intentional device mismatch tests during operation at 50 V. Reliability is tested at a drain bias of 50 V. Under DC conditions a drain-current degradation below 20% after 20 years is extrapolated. Under RF stress the observed change in output power is well below 0.1 dB after a test duration of more than 500h.