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1991
Conference Paper
Title
An integrated laser driver circuit based on implanted collector InGaAs/InAlAs HBTs
Abstract
The fabrication and performance of an InP-based differential-amplifier type integrated laser driver circuit incorporating three implanted-collector heterojunction bipolar transistors and a resistor is described. The integrated circuit exhibits a current modulation capability of 4 Gbit/s and a transconductance of around 30 mS.
Language
English
Keyword(s)
aluminium compounds
bipolar integrated circuits
driver circuits
gallium arsenide
heterojunction bipolar transistors
iii-v semiconductors
indium compounds
laser accessories
semiconductor junction lasers
semiconductor
integrated laser driver circuit
implanted collector
fabrication
performance
resistor
current modulation capability
transconductance
InGaAs-InAlAs