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  4. An integrated laser driver circuit based on implanted collector InGaAs/InAlAs HBTs
 
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1991
Conference Paper
Title

An integrated laser driver circuit based on implanted collector InGaAs/InAlAs HBTs

Abstract
The fabrication and performance of an InP-based differential-amplifier type integrated laser driver circuit incorporating three implanted-collector heterojunction bipolar transistors and a resistor is described. The integrated circuit exhibits a current modulation capability of 4 Gbit/s and a transconductance of around 30 mS.
Author(s)
Su, L.M.
Kunzel, H.
Bach, H.G.
Schlaak, W.
Grote, N.
Mainwork
Gallium arsenide and related compounds 1990. Proceedings  
Conference
International Symposium on Gallium Arsenide and Related Compounds 1990  
Language
English
Fraunhofer-Institut für Nachrichtentechnik, Heinrich-Hertz-Institut HHI  
Keyword(s)
  • aluminium compounds

  • bipolar integrated circuits

  • driver circuits

  • gallium arsenide

  • heterojunction bipolar transistors

  • iii-v semiconductors

  • indium compounds

  • laser accessories

  • semiconductor junction lasers

  • semiconductor

  • integrated laser driver circuit

  • implanted collector

  • fabrication

  • performance

  • resistor

  • current modulation capability

  • transconductance

  • InGaAs-InAlAs

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