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  4. Growth of GaN crystals and epilayers from solutions at ambient pressure
 
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2004
Conference Paper
Title

Growth of GaN crystals and epilayers from solutions at ambient pressure

Author(s)
Meissner, E.  
Sun, G.
Hussy, S.
Birkmann, B.
Friedrich, J.  
Müller, G.
Mainwork
21st Century COE Joint International Workshop on Bulk Nitrides 2003. Proceedings  
Conference
Joint International Workshop on Bulk Nitrides 2003  
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
Keyword(s)
  • GaN

  • low pressure solution growth

  • III-V semiconductor

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