1987
Conference Paper
Title

Half micrometer N-MOS technology using X-ray lithography

Abstract
MOSFETs with effective channel lengths down to 0.3 mym have been realized using x-ray lithography. To determine process parameters for device optimization two dimensional process and device modeling was employed. In addition, ring oscillators with different numbers of stages were fabricated to evaluate the performance of this technology. (IMT)
Author(s)
Huber, H.-L.
Lauer, V.
Bauer, F.
Korec, J.
Balk, P.
Mainwork
Conference
Language
English
Keyword(s)