Emitter epitaxy for crystalline silicon thin-film solar cells

This paper presents results of crystalline silicon thin-film solar cells (cSiTF) with in-situ epitaxial emitters deposited by high temperature atmospheric pressure CVD. Emitters formed by epitaxy could provide an alternative for an adjustable emitter shape with a short deposition time. Simulation results reveal a large potential deposited emitters were characterized using SIMS, SRP and SEM. For preliminary investigations, solar cells without texturization from p- and n-typ wafers were processed with epitaxial emitters. Efficiencies up to 14.2% of boron doped emitters on n-type Fz, as well as efficiencies up to 13.9% of phosphorus layers on cSiTF are presented.