Demonstration of Large Polarization in Si-doped HfO2 Metal-Ferroelectric-Insulator-Semiconductor Capacitors with Good Endurance and Retention

This paper reports that large polarization (2Pr≈35.3 μC/cm2) can be demonstrated in Si-doped Hf02 Metal-Ferroelectric-Insulator-Semiconductor Capacitors with proper annealing temperature. In addition, wake-up free characteristic as well as good retention for up to 104 seconds is observed for the devices used in the present study. It is also found that devices with different annealing temperatures lead to distinct leakage behavior, which adversely affected the cycle-to-breakdown reliability.