A Full E-Band Single-Channel SiGe Transceiver MMIC for Monostatic FMCW Radar Systems

In this paper a fully integrated monostatic single-channel SiGe transceiver chip is presented for applications in the whole E-Band. The architecture consists of a fundamental E-Band VCO, a direct down-conversion mixer, a static divider chain, and coupling/matching networks at the output for a good chip-to-PCB interface via bond wires. The chip is fabricated in Infineon's BiCMOS production technology B11HFC which offers HBTs with an fT of 250GHz and fmax of 370GHz. The peak output power of the chip is-1 dBm while the receive mixer offers a-0.2 dBm input referred compression point to keep it from being saturated. The chip has a power consumption of 254mW and uses an area of 1.35mm2, A complete FMCW radar system prototype is also presented with a power consumption below 2.1 W and an effective chirp bandwidth of 31.1 GHz in the E-Band. The output power at the antenna flange is around-5 dBm. The in-loop phase noise at 10 kHz offset is better than-78 dBc/Hz in a wide frequenc y range of 32.1 GHz.