RRAM-as-Reference Sensing with Parallelogram Crossbar Architecture for Large-Scale Arrays

This paper proposes a reading scheme for RRAM devices that employs an RRAM as the reference element utilizing its multi-level, which reduces the sense margin issue in large-scale crossbars, especially for distant RRAM cells, relative to the traditional resistor-based reference. Furthermore, a parallelogram-shaped crossbar architecture is introduced, enabling all cells to share a single sense amplifier while mitigating the imbalance of parasitic resistances along the sensing current path.