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  4. Modelling (100) hydrogen-induced platelets in silicon with a multi-scale molecular dynamics approach
 
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2007
Conference Paper
Title

Modelling (100) hydrogen-induced platelets in silicon with a multi-scale molecular dynamics approach

Abstract
We introduce a multiscale molecular dynamics (MD) approach to study the thermal evolution of (100) hydrogen-induced platelets (HIPs) in silicon. The HIPs are modelled by 10 nm long planar defects in a periodically repeated crystalline model system containing are stabilized by saturating the resulting surface dangling bonds with hydrogen atoms. The time evolution of the defects is studied by finite-temperature MD using the Learn On The Fly (LOTF) technique. This hybrid scheme allows us to perform accurate density-functional-tight-binding (DFTB) force calculations only on the chemically reactive platelet zone, while the surrounding silicon crystal is described by the Stillinger-Weber (SW) classical potential. Reliable dynamical trajectories are obtained by choosing the DFTB zone in a way which minimizes the errors on the atomic forces.
Author(s)
Moras, G.
Ciacchi, L.C.
Csanyi, G.
Vita, A. de
Mainwork
24th International Conference on Defects in Semiconductors 2007. Proceedings  
Conference
International Conference on Defects in Semiconductors 2007  
Open Access
File(s)
Download (1.8 MB)
DOI
10.1016/j.physb.2007.08.104
10.24406/publica-r-356045
Additional link
Full text
Language
English
Fraunhofer-Institut für Werkstoffmechanik IWM  
Keyword(s)
  • hydrogen-related platelet

  • smart cut

  • silicon

  • molecular dynamic

  • hybrid method

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