Raman scattering study of low dose Si+-/implanted GaAs used for metal-semiconductor field-effect transistor fabrication

The annealing of the lattice damage introduced by Si+ implantation into GaAs as well as the electrical activation of the dopant has been studied by Raman scattering. Implantation doses (4x10 E12-1x10 E13 cm -2) and annealing conditions (800-1040 degrees C for 5 s) were used which are typical for GaAs metal-semiconductor field-effect transistor fabrication. The normalized peak intensity of the longitudinal optical (LO) phonon-plasmon coupled mode is found to correlate with the sheet of conductivity, i.e., it probes the electrical activation. The lattice perfection, in contrast, is most sensitively measured by resonant 2LO-phonon scattering. (IAF)