A Modeling of 4H-SiC Super-Junction MOSFETs with Filtered High Energy Implantation

In this paper, the modeling of SJ-MOSFETs beyond the voltage class of 3.3 kV simulated with verified deep aluminum box-like shaped profiles by using TCAD simulation is described. The simulation results are used to investigate the influence of ion implantation parameters on electrical characteristics. For the formation of pillar regions, high energy implantation is performed through energy filter with a multi epitaxial growth method using a patterned mask. While high thickness of epitaxial layer is indispensable for obtaining a high blocking capability, it is revealed that the optimization of doping concentration of p-pillar and drift layer parameters yields similar on-state-resistance by charge compensations of SJ-structure.