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  4. High-power InAlGaAs laser diodes with high efficiency at 980 nm
 
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1999
Conference Paper
Title

High-power InAlGaAs laser diodes with high efficiency at 980 nm

Other Title
Hocheffiziente Hochleistungs-Laserdioden aus InAlGaAs bei 980nm Wellenlänge
Abstract
Within the last few years, high power laser diodes with remarkable improvements concerning output power. efficiency, and reliability have been investigated in the wavelength range between 780 nm and 1064 nm. The discussion, whether laser diodes fabricated from Al-free material systems can surpass the performance of devices made from the conventional InAlGaAs-material system is still ongoing. In our contribution to this discussion we present 980 nm high- power InAlGaAs-laser diodes and laser diode bars with high conversion efficiencies grown by MBE. Broad area laser diodes with 100 mu m aperture show an output power as high as 9.2 W cw at room temperature corresponding to a COMD level of 17 MW/cm2. Up to this output power the conversion efficiency remains above 46 per cent. The highest efficiency of nearly 60 per cent is reached at 2.5 W of output power. Reliability tests are ongoing and predict a lifetime of at least 20.000 h at a power level of 1.5 W cw. Laser diode bars of 1 cm width comprising 25 of these oscillators have been fabricated. Similar to single emitters these devices achieve a conversion efficiency of 58 per cent at 62 W of cw output power. In terms of conversion efficiency and output power these results are among the best reported for both, Al-containing and Al-free laser diodes and laser diode bars. They can be attributed to the material quality, the facet coating technology, and the design of our devices. Clearly, they show the competitiveness of the material system used here.
Author(s)
Mikulla, Michael  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Schmitt, A.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Walther, Martin  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Kiefer, R.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Moritz, R.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Müller, Stefan
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Sah, R.E.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Braunstein, J.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Weimann, G.
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
In-plane semiconductor lasers III  
Conference
Conferene on In-Plane Semiconductor Lasers 1999  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • diode laser

  • Diodenlaser

  • high efficiency

  • Hocheffizienz

  • InAlGaAs

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