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1993
Conference Paper
Title
An intelligent 600 V vertical IGBT on SIMOX substrate
Abstract
This paper describes a smart power device which uses a vertical 600 V, 10 A IGBT as a power switch and a signal and control circuit fabricated with a 2 mym SOI-CMOS technology. The dielectric isolation between the IGBT and the control circuit is formed by SIMOX (separation by implanted oxygen) and LOCOS technology. A self protection is achieved by measuring load current and device temperature. The protection is provided by analog and digital CMOS circuits with a supply voltage of 10 V. This device is used as an intelligent switch in a full bridge circuit for motor control.