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  4. An intelligent 600 V vertical IGBT on SIMOX substrate
 
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1993
Conference Paper
Title

An intelligent 600 V vertical IGBT on SIMOX substrate

Abstract
This paper describes a smart power device which uses a vertical 600 V, 10 A IGBT as a power switch and a signal and control circuit fabricated with a 2 mym SOI-CMOS technology. The dielectric isolation between the IGBT and the control circuit is formed by SIMOX (separation by implanted oxygen) and LOCOS technology. A self protection is achieved by measuring load current and device temperature. The protection is provided by analog and digital CMOS circuits with a supply voltage of 10 V. This device is used as an intelligent switch in a full bridge circuit for motor control.
Author(s)
Mütterlein, B.
Vogt, F.P.
Weyers, J.
Vogt, H.
Mainwork
ESSDERC '93. 23rd European Solid State Device Research Conference. Proceedings  
Conference
European Solid State Device Research Conference 1993  
Language
English
Fraunhofer-Institut für Mikroelektronische Schaltungen und Systeme IMS  
Keyword(s)
  • IGBT

  • insulated-gate bipolar transistor

  • Leistungselektronik

  • Leistungstransistor

  • power integrated circuit

  • SIMOX

  • smart power ICs

  • Smart-power-Technik

  • smart power technology

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