• English
  • Deutsch
  • Log In
    Password Login
    Research Outputs
    Fundings & Projects
    Researchers
    Institutes
    Statistics
Repository logo
Fraunhofer-Gesellschaft
  1. Home
  2. Fraunhofer-Gesellschaft
  3. Konferenzschrift
  4. Novel techniques for dopant contrast analysis on real IC structures
 
  • Details
  • Full
Options
2012
Conference Paper
Title

Novel techniques for dopant contrast analysis on real IC structures

Abstract
In this paper advanced techniques for dopant contrast imaging based on Scanning Electron Microscopy will be presented. It will be shown that biasing the pn-junction of Silicon based dopant structures significantly improves the sensitivity for dopant contrast imaging thus allowing to investigate low doped regions as well as sub-mu m scaled dopant profiles of transistor and diode structures in integrated circuits. This new imaging technique is demonstrated on a defective diode structure of an image sensor device.
Author(s)
Jatzkowski, J.
Simon-Najasek, M.
Altmann, F.
Mainwork
23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis  
Conference
European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF) 2012  
DOI
10.1016/j.microrel.2012.06.113
Language
English
Fraunhofer-Institut für Werkstoffmechanik IWM  
Keyword(s)
  • scanning electron microscopy

  • dopant contrast analysis

  • pn-junction of Silicon based dopant structures

  • Cookie settings
  • Imprint
  • Privacy policy
  • Api
  • Contact
© 2024