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2012
Conference Paper
Titel

Novel techniques for dopant contrast analysis on real IC structures

Abstract
In this paper advanced techniques for dopant contrast imaging based on Scanning Electron Microscopy will be presented. It will be shown that biasing the pn-junction of Silicon based dopant structures significantly improves the sensitivity for dopant contrast imaging thus allowing to investigate low doped regions as well as sub-mu m scaled dopant profiles of transistor and diode structures in integrated circuits. This new imaging technique is demonstrated on a defective diode structure of an image sensor device.
Author(s)
Jatzkowski, J.
Simon-Najasek, M.
Altmann, F.
Hauptwerk
23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis
Konferenz
European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF) 2012
Thumbnail Image
DOI
10.1016/j.microrel.2012.06.113
Language
English
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Fraunhofer-Institut für Werkstoffmechanik IWM
Tags
  • scanning electron mic...

  • dopant contrast analy...

  • pn-junction of Silico...

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