SWOP - Charge carrier depth profiling of boron doped single crystalline silicon

The Stepwise Oxidation Profiling technique is applied to boron doped single crystalline silicon. The procedure works by altering between electrical sheet resistance measurements and Si consumption by electrochemical anodic oxidation. The fabrication of planar van-der-Pauw structures was introduced. It was shown that the SWOP profiles are matching well with SIMS reference measurements, and a depth resolution of 1 nm and a detection limit of 1×10 16cm-3 was achieved.