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2025
Conference Paper
Title
A Ka-Band GaN Doherty Power Amplifier with High Efficiency Over a Fractional Bandwidth of 20.4%
Abstract
This paper presents the design and implementation of a Ka-band Doherty power amplifier (DPA) fabricated on a 0.1 µm gate-length GaN-on-SiC HEMT
technology. The DPA achieves a fractional bandwidth (FWB) of 20.4% associated with high power-added efficiency (PAE). This circuit bandwidth extension emanates from adopting an impedance inverting network incorporating the transistor’s equivalent output capacitance and operating the Main and
Auxiliary transistor under maximum output power instead of maximum PAE loading. On-carrier, continuous-wave (CW) measurements performed on the DPA from 22.5 to 27.5 GHz show that the DPA delivers a saturated output power of 31.1-32.4 dBm associated with a peak PAE of 23.6-38.8%. At 6 and 8 dB output power back-off (OPBO), the DPA achieves a PAE of 22.8-29% and 20-23.2%, respectively. To the author’s best knowledge, this is the broadest circuit bandwidth reported on GaN-DPAs at Ka-band.
technology. The DPA achieves a fractional bandwidth (FWB) of 20.4% associated with high power-added efficiency (PAE). This circuit bandwidth extension emanates from adopting an impedance inverting network incorporating the transistor’s equivalent output capacitance and operating the Main and
Auxiliary transistor under maximum output power instead of maximum PAE loading. On-carrier, continuous-wave (CW) measurements performed on the DPA from 22.5 to 27.5 GHz show that the DPA delivers a saturated output power of 31.1-32.4 dBm associated with a peak PAE of 23.6-38.8%. At 6 and 8 dB output power back-off (OPBO), the DPA achieves a PAE of 22.8-29% and 20-23.2%, respectively. To the author’s best knowledge, this is the broadest circuit bandwidth reported on GaN-DPAs at Ka-band.
Author(s)
Conference