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  4. Implementation of 4H-SiC PiN-diodes as nearly linear temperature sensors up to 800 K towards SiC multi-sensor integration
 
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2017
Conference Paper
Title

Implementation of 4H-SiC PiN-diodes as nearly linear temperature sensors up to 800 K towards SiC multi-sensor integration

Abstract
The usability of 4H-SiC pin-diodes as nearly linear temperature sensors up to 800 K is demonstrated. Two sensor concepts were evaluated including the constant current forward bias (CCFB) concept and the integrated proportional to absolute temperature (PTAT) concept. The maximum sensitivity was 4.5 mV/K for the CCFB and an applied current density of 118 nA/cm2. Additionally, this device can be used for UV detection, too, demonstrating the feasibility of 4H-SiC multi-sensor integration.
Author(s)
Matthus, C.D.
Erlbacher, T.  
Schöfer, B.
Bauer, A.J.
Frey, L.
Mainwork
Silicon carbide and related materials 2016  
Conference
European Conference on Silicon Carbide and Related Materials (ECSCRM) 2016  
DOI
10.4028/www.scientific.net/MSF.897.618
Language
English
Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB  
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