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  4. Compatibility of impurity-free selective interdiffusion with high-speed and high-power pseudomorphic InyGa1-yAs/GaAs MQW lasers
 
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1994
Conference Paper
Title

Compatibility of impurity-free selective interdiffusion with high-speed and high-power pseudomorphic InyGa1-yAs/GaAs MQW lasers

Other Title
Kompatibilität von deckschichtinduzierter, selektiver Interdiffusion mit der Herstellung von pseudomorphen InyGa1-yAs/GaAs Hochleistungs- und Hochgeschwindigkeitslaserdioden
Author(s)
Bürkner, S.
Baeumler, Martina  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Wagner, J.
Larkins, E.C.
Flemig, G.
Rothemund, W.
Ralston, J.D.
Mainwork
LEOS '94. 7th Annual Meeting. Conference Proceedings. Vol.1  
Conference
IEEE Lasers and Electro-Optics Society (Annual Meeting) 1994  
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • high power laser

  • Hochgeschwindigkeitslaser

  • impurity-free interdiffusion

  • InGaAs/GaAs laser

  • Interdiffusion

  • Kurzzeittemperung

  • rapid thermal annealing

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