Photoluminescence from the quasi-two-dimensional electron gas at a single silicon delta-doped layer in GaAs

Radiative recombination of quasi-two-dimensional electrons with photocreated holes is reported in single silicon delta-doped layers in GaAs. These holes are confined within is repulsive for holes. Replacing the GaAs surface by an Al0.33Ga0.67As/GaAs heterointerface the photoluminescence from the delta-doping spike is drastically enhanced. It is shown by photoluminescence and Raman spectroscopy that density of carriers created by cw photoexcitation can be made sufficiently high in the heterostructure to modify actual shape of the doping-induced potential well.