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  4. Thin-film In-doped V-catalysed SnO2 gas sensors.
 
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1992
Journal Article
Title

Thin-film In-doped V-catalysed SnO2 gas sensors.

Other Title
Indium-dotierte Zinndioxid-Dünnschicht-Gassensoren mit Vanadium-Katalysator
Abstract
Thin-film In-doped V-catalysed SnO2 gas sensors are discussed and compared with Pt-catalysed In-doped or undoped SnO2 gas sensors. The In acceptors are implanted, while the catalysts are directly evaporated onto the active sensor layer. The V/In catalyst/dopant combination leads to thin-film sensors highly sensitive to NO2, while nearly no cross sensitivity to CO, CO2, H2 and CH4 is detectable. The maximum conductivity change of the V-catalyst In-doped SnO2 sensor in NO2-enriched synthetic air occurs at about 200 degree C.
Author(s)
Löw, H.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Sulz, G.  
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Lacher, M.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Kühner, G.  
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Uptmoor, G.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Reiter, H.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Steiner, K.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Journal
Sensors and Actuators. B  
DOI
10.1016/0925-4005(92)80219-N
Language
English
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Keyword(s)
  • Dünnschicht

  • gas sensor

  • gassensor

  • implantation

  • indium dopant

  • Indium-Dotierung

  • p-Dotierung

  • p-type doped

  • thin films

  • tin dioxide

  • vanadium catalyst

  • Vanadium-Katalysator

  • Zinndioxid

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