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2009
Conference Paper
Title
Near field scanning with optoelectronic E-field probes
Abstract
Optoelectronic field probes are well suited for RF-near-field scanning purpose. Such field probes cause only very little back scattering of electromagnetic energy to the measured radiation source. In the paper the technique of planar near-field scanning is presented. The analysis of the back scattering effect is described. Moreover, a model of the probe polarization characteristic is presented. Finally, a numerical method of polarization correction for planar near field distribution functions is described, which utilizes the knowledge of the optoelectronic field probe polarization characteristic.
Language
English
Keyword(s)