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1995
Book Article
Title
CW direct modulation bandwidths up to 40 GHz in short-cavity In0.35Ga0.65As/GaAs MQW lasers with undoped active regions
Other Title
In0.35Ga0.65As/GaAs Mehrfach-Quantenfilm Laserdioden mit undotierter aktiver Zone und Modulationsbandbreiten bis 40 GHz im Dauerstrichbetrieb
Abstract
We present the first semiconductor lasers to achieve direct CW modulation bandwidths exceeding 40GHz. The devices utilize undoped In0.35Ga0.65As/GaAs active regions and achieve largesignal modulation up to 20 Gbit/s together with linewidth enhancement factors as low as 1.4.
Author(s)