Characterization of eutectic wafer bonding using gold and silicon

In this paper, the investigation of eutectic bonding at wafer level was implemented using single crystalline Si, poly-Si and a-Si. Manifold experiment parameters of material and process were employed. Strength and yield of the bonds were investigated and characterized. Typical optical methods like SEM, infrared as well as ultra sonic measurements were performed to observe visual features. These results show the possibilities of this technology and open future practical application.