Optical properties of the SbGa heteroantisite defect in GaAs:Sb

Photoelectron-paramagnetic-resonance and near-infrared-absorption measurements on antimony-doped GaAs:Sb are reported. The results provide convincing evidence that the E sub c - 0.48 eV level in this material, previously inferred from Hall-effect measurements, is the (O/+) donor level of the Sb sub Ga heteroantisite defect.