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2004
Journal Article
Title

New thermoelectric components using microsystem technologies

Abstract
This paper describes the first thermoelectric devices based on the V-VI-compounds Bi/sub 2/Te/sub 3/ and (Bi,Sb)/sub 2/Te/sub 3/ which can be manufactured by means of regular thin film technology in combination with microsystem technology. Fabrication concept, material deposition for some 10-/spl mu/m-thick layers and the properties of the deposited thermoelectric materials will be reported. First device properties for Peltier-coolers and thermogenerators will be shown as well as investigations on long term and cycling stability. Data on metal/semiconductor contact resistance were extracted form device data. Device characteristics like response time for a Peltier-cooler and power output for a thermogenerator will be compared to commercial devices.
Author(s)
Böttner, H.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Nurnus, J.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Gavrikov, A.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Kühner, G.  
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Jägle, M.  
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Künzel, C.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Eberhard, D.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Plescher, G.
Fraunhofer-Institut für Physikalische Messtechnik IPM  
Schubert, A.
Schlereth, K.-H.
Journal
Journal of Microelectromechanical Systems  
Open Access
File(s)
Download (6.48 MB)
Rights
Use according to copyright law
DOI
10.1109/JMEMS.2004.828740
10.24406/publica-r-206517
Additional link
Full text
Language
English
Fraunhofer-Institut für Physikalische Messtechnik IPM  
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