Publication:
Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications

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cris.virtual.departmentFraunhofer-Institut für Mikrostruktur von Werkstoffen und Systemen IMWS
cris.virtual.departmentFraunhofer-Institut für Angewandte Festkörperphysik IAF
cris.virtual.departmentFraunhofer-Institut für Angewandte Festkörperphysik IAF
cris.virtual.departmentFraunhofer-Institut für Angewandte Festkörperphysik IAF
cris.virtual.departmentFraunhofer-Institut für Angewandte Festkörperphysik IAF
cris.virtual.departmentFraunhofer-Institut für Angewandte Festkörperphysik IAF
cris.virtual.orcid#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0002-3003-0134
cris.virtual.orcid#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtualsource.department794625d4-65f4-46dc-a2bf-1015b1494d4c
cris.virtualsource.department37e1fa58-18d0-4ec2-8032-ade9e3bf3c75
cris.virtualsource.department27841683-306a-4ef8-a14c-c104bfe4d5df
cris.virtualsource.department4e149259-16b4-4d66-be4f-674f9f5c93ce
cris.virtualsource.department9e70cefd-ea40-432e-b265-ec0982229428
cris.virtualsource.departmentc1e8f626-2cb0-4cd6-891f-eba05d400e6d
cris.virtualsource.orcid794625d4-65f4-46dc-a2bf-1015b1494d4c
cris.virtualsource.orcid37e1fa58-18d0-4ec2-8032-ade9e3bf3c75
cris.virtualsource.orcid27841683-306a-4ef8-a14c-c104bfe4d5df
cris.virtualsource.orcid4e149259-16b4-4d66-be4f-674f9f5c93ce
cris.virtualsource.orcid9e70cefd-ea40-432e-b265-ec0982229428
cris.virtualsource.orcidc1e8f626-2cb0-4cd6-891f-eba05d400e6d
crisou.acronymIAF
crisou.acronymIMWS
dc.contributor.authorDammann, Michael
dc.contributor.authorBaeumler, Martina
dc.contributor.authorPolyakov, Vladimir M.
dc.contributor.authorBrueckner, Peter
dc.contributor.authorKonstanzer, Helmer
dc.contributor.authorQuay, Rüdiger
dc.contributor.authorMikulla, Michael
dc.contributor.authorGraff, Andreas
dc.contributor.authorSimon-Najasek, M.
dc.date.accessioned2022-03-05T15:48:16Z
dc.date.available2022-03-05T15:48:16Z
dc.date.issued2017
dc.description.abstractThe effect of gate metallization and gate shape on the reliability and RF performance of 100 nm AlGaN/GaNHEMTs on SiC substrate for mm-wave applications has been investigated under on-state DC-stress tests. By replacing the gate metallization from NiPtAu to PtAu the median time to failure at Tch= 209 °C can be improved from 10 h to more than 1000 h. Replacing the PtAu T-gate by a spacer gate further reduces the degradation rate under on-state stress, but decreases the current-gain cut-off frequency from 75 GHz to 50 GHz. Physical failure analysis using electroluminescence and TEM cross-section revealed pit and Ni void formation at the gate foot as the main degradation mechanisms of devices with NiPtAu T-gate. High resolution EDX mapping of stressed devices indicates that the formation of pits is caused by a local aluminium oxidation process. Simulation of the stress induced changes of the input characteristics of devices with NiPtAu gate further proves the formation of pits and Ni voids.
dc.description.startpageS.292-297
dc.description.volume76-77
dc.identifier.doi10.1016/j.microrel.2017.07.008
dc.identifier.scopus2-s2.0-85025454838
dc.identifier.urihttps://publica.fraunhofer.de/handle/publica/252597
dc.language.isoen
dc.relation.ispartofMicroelectronics reliability
dc.subjectreliability
dc.subjectGaN HEMT
dc.subjectinfrared microscopy
dc.subjectdrain-current step stress
dc.subjectTEM
dc.subjectdegradation mechanism
dc.subjectAu-diffusion
dc.subjectvoid
dc.subjectelectroluminescence
dc.subjectstorage test
dc.subject.ddc621
dc.titleReliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications
dc.typejournal article
dspace.entity.typePublication
oairecerif.author.affiliationFraunhofer-Institut für Angewandte Festkörperphysik IAF
oairecerif.author.affiliationFraunhofer-Institut für Angewandte Festkörperphysik IAF
oairecerif.author.affiliationFraunhofer-Institut für Angewandte Festkörperphysik IAF
oairecerif.author.affiliationFraunhofer-Institut für Angewandte Festkörperphysik IAF
oairecerif.author.affiliationFraunhofer-Institut für Angewandte Festkörperphysik IAF
oairecerif.author.affiliationFraunhofer-Institut für Angewandte Festkörperphysik IAF
oairecerif.author.affiliationFraunhofer-Institut für Angewandte Festkörperphysik IAF
oairecerif.author.affiliationFraunhofer-Institut für Mikrostruktur von Werkstoffen und Systemen IMWS
oairecerif.author.affiliationFraunhofer-Institut für Mikrostruktur von Werkstoffen und Systemen IMWS
publica.author.alternativeaffiliation#PLACEHOLDER_PARENT_METADATA_VALUE#
publica.author.alternativeaffiliation#PLACEHOLDER_PARENT_METADATA_VALUE#
publica.author.alternativeaffiliation#PLACEHOLDER_PARENT_METADATA_VALUE#
publica.author.alternativeaffiliation#PLACEHOLDER_PARENT_METADATA_VALUE#
publica.author.alternativeaffiliation#PLACEHOLDER_PARENT_METADATA_VALUE#
publica.author.alternativeaffiliationIMTEK
publica.author.alternativeaffiliation#PLACEHOLDER_PARENT_METADATA_VALUE#
publica.author.alternativeaffiliation#PLACEHOLDER_PARENT_METADATA_VALUE#
publica.author.alternativeaffiliation#PLACEHOLDER_PARENT_METADATA_VALUE#
publica.date17.04.2018
publica.fhg.departmentGF2
publica.fhg.instituteFraunhofer-Institut für Angewandte Festkörperphysik IAF
publica.fhg.instituteFraunhofer-Institut für Mikrostruktur von Werkstoffen und Systemen IMWS
publica.fhg.location#PLACEHOLDER_PARENT_METADATA_VALUE#
publica.fhg.location#PLACEHOLDER_PARENT_METADATA_VALUE#
publica.mig.recordnumber261553
publica.oa.url10.1016/j.microrel.2017.07.008
publica.peerreviewedUlrichs
publica.peerreviewedISI
publica.peerreviewedSCOPUS
publica.peerreviewedScopus
publica.rights.oaStatusclosed
publica.rights.oaUnpaywallFalse
publica.rights.timestamp2026-04-11 16:04:50.245413

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