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  4. Piezoresistive sensors based on SWCNTs produced by unique pulsed arc discharge
 
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2012
Poster
Title

Piezoresistive sensors based on SWCNTs produced by unique pulsed arc discharge

Title Supplement
Poster at SSD 2012, International Conference on Sensors, Circuits and Instrumentation Systems as part of the 9th International Multi-Conference on Systems, Signals & Devices, March 20 - 23, 2012, Chemnitz, Germany
Other Title
Piezoresistive Sensoren auf Basis von SWCNTs, die mit einem gepulsten Lichtbogenverfahren des Fraunhofer hergestellt werden
Abstract
Modern pressure sensors are based on the piezoresistive effect. This effect is very high using CNTs. Narrow bandgap single walled carbon nanotubes (SWCNT) are outstanding qualified for this type of sensors. They are produced by unique pulsed arc discharge at the Fraunhofer Institute for Material and Beam Technology (FhG-IWS). The process has not only a high manufacturing output and efficiency but the ratio of semiconducting (sc)-SWCNTs is also scalable up to over 70 % depending on the process parameters selected. After purification these sc-SWCNTs are dispersed and integrated in polymer films (e. g. polysulfone, epoxide). The challenge is to achieve a suitable distribution of the sc-SWCNTs in the polymer film for electrical percolation and resulting piezoresistive sensitivity.
Author(s)
Lehmann, Beata
Endmann, Toni
Augustow, Andrej
Roch, Aljoscha
Roch Talens, Esther
Jost, Oliver
Leson, Andreas  
Conference
International Conference on Sensors, Circuits and Instrumentation Systems (SCI) 2012  
International Multi-Conference on Systems, Signals & Devices (SSD) 2012  
File(s)
Download (13.81 MB)
Rights
Use according to copyright law
DOI
10.24406/publica-fhg-376879
Language
English
Fraunhofer-Institut für Werkstoff- und Strahltechnik IWS  
Keyword(s)
  • piezoresistive sensor

  • SWCNT

  • pulsed arc discharge

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