Improvements in simulation at 2d implantation profiles

Shrinking device dimensions require the reduction of high temperature steps or their replacement by RTA. Therefore, an accurate knowledge of implanted dopant profiles becomes more and more important. This means that a very good profile description is required especially in case of implantation through thin layers, e. g. a scattering oxide, or near non-vertical mask edges, e. g. a photoresist edge, and that the lateral spread and its depth dependence must be modelled accurately. In this paper, models and measurements of implantations into two-layer structures and of two dimensional implantation profiles are discussed.