Options
1998
Journal Article
Title
Post-growth Zn diffusion into InGaAs/InP in a LP-MOVPE reactor
Abstract
MOVPE based Zn contact diffusion into InGaAs using DMZn as source material was investigated. Maximum hole densities above 1*1020 cm-3 could reproducibly be attained. To achieve this, the presence of an appropriate concentration of AsH3 during diffusion proved to be of crucial importance. The Zn incorporation was found to exponentially increase with decreasing diffusion temperature until Zn3As2 starts to deposit on the wafer at approximately 500 degrees C. Due to the use of wafer rotation excellent lateral diffusion uniformity as characterized by sheet resistance measurements was obtained. The MOVPE based diffusion process features several advantages which make this method superior to existing techniques.
Keyword(s)
diffusion
doping profiles
electrical resistivity
gallium arsenide
hole density
iii-v semiconductors
indium compounds
mocvd
ohmic contacts
secondary ion mass spectra
semiconductor doping
semiconductor epitaxial layers
vapour phase epitaxial growth
zinc
movpe
metal-organic vapour phase epitaxy
postgrowth zn diffusion
zn contact diffusion
diffusion temperature
temperature dependence
diffusion process
iv characteristics
dopant profiles
sims
500 to 600 c
InGaAs-InP