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  4. Analysis and optimization approach for the doped amorphous layers of silicon heterojunction solar cells
 
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2011
Journal Article
Title

Analysis and optimization approach for the doped amorphous layers of silicon heterojunction solar cells

Abstract
Comparison of the open-circuit voltage (external voltage V(oc,ext)) determined by Suns-V(oc) measurements with the implied voltage V(oc, impl) determined by transient photoconductance decay lifetime measurements can yield a quick and easy analysis of silicon heterojunction (SHJ) solar cells, especially in regard to finding the optimum doping concentration of the emitter layer [or back surface field (BSF)]. A sufficiently high doping concentration of the emitter and BSF is mandatory to extract the internal Fermi-level splitting and thus the internal voltage, at the solar cell contacts. However increasing the concentration of doping gases during the deposition of doped amorphous silicon layers results in a reduction of the interface passivation quality and Voc, impl. The best trade off is realized when the ratio of V(oc,ext) to V(oc,impl) (external/internal V(oc)-ratio zeta) reaches a saturation value near 1 upon increasing the doping concentration. AFORS-HET (Automat FOR Simulation of HETerostructures) simulations resulted in the conclusion that the characteristics of the external/internal Voc-ratio are mainly determined by the active doping concentration (doping minus defect concentration).
Author(s)
Pysch, Damian
Meinhard, C.
Harder, N.-P.
Hermle, Martin  
Glunz, Stefan W.  
Journal
Journal of applied physics  
Open Access
File(s)
Download (887.21 KB)
DOI
10.24406/publica-r-227039
10.1063/1.3650255
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
Keyword(s)
  • Solarzellen - Entwicklung und Charakterisierung

  • Silicium-Photovoltaik

  • Oberflächen - Konditionierung

  • Passivierung

  • Lichteinfang

  • Herstellung und Analyse von hocheffizienten Solarzellen

  • Industrielle und neuartige Solarzellenstrukturen

  • Charakterisierung

  • Qualitätssicherung und Messtechnikentwicklung - Material

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