High-quality ZrO2 /Si (001) thin films by a sol-gel process: Preparation and characterization

ZrO2 films with a sub-10-nm thickness and a roughness of about 0.2 nm have been prepared on Si(001) by a sol-gel process based on zirconium-(IV)-n-propoxide. The topography of the obtained samples has been controlled by atomic force microscopy. Chemical composition and interface reactions of the deposited films have been studied by x-ray photoemission spectroscopy and Auger electron spectroscopy. The ZrO2 films are stable against heating (up to 700°C) in a moderate oxygen atmosphere (2× 10-5 mbar oxygen partial pressure). Minor changes in the surface composition occur after rapid annealing up to 1000°C.