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  4. Super-low power X Band, Voltage Controlled Oscillator designed in 22 nm FDSOI
 
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2024
Conference Paper
Title

Super-low power X Band, Voltage Controlled Oscillator designed in 22 nm FDSOI

Abstract
This paper presents the design architecture, simulation and measurement result of a stable high-performance on-chip signal generator system. The system consists of an ultra-low-power Voltage controlled oscillator designed for the frequency range of 7.2-8.2 GHz and is interfaced with a divide-by-2 prescaler. The circuit generates an RF output of 3.6 GHz to 4.1 GHz with constant average output power and phase-noise (PN). The minimum current consumption of the VCO core is 1.05 mA at a supply voltage of 250 mV and a back gate voltage of 1.4 V. The back gate bias is adapted in the RF block to minimize the DC power consumption and enhance the PN and the output power.
Author(s)
Kumar, Piyush
Böhme, Enno
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT  
Maurer, Linus N.
Mainwork
25th International Microwave and Radar Conference (MIKON) 2024  
Conference
International Microwave and Radar Conference 2024  
DOI
10.23919/MIKON60251.2024.10633988
Language
English
Fraunhofer-Einrichtung für Mikrosysteme und Festkörper-Technologien EMFT  
Keyword(s)
  • 22 nm-FDSOI

  • Back-gate bias

  • CMOS

  • Cryogenic

  • DCVSL

  • IOT

  • Medical

  • PN

  • Prescaler

  • Super low power

  • Ultra-low-power

  • X-Band

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