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  4. Resonant-tunneling transfer times between asymmetric GaAs/Al(0.35)Ga(0.65)As double quantum wells
 
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1990
Journal Article
Title

Resonant-tunneling transfer times between asymmetric GaAs/Al(0.35)Ga(0.65)As double quantum wells

Other Title
Transfer-Zeiten beim resonanten Tunneln zwischen asymmetrischen GaAs/Al(0.35)Ga(0.65)As Doppel-Quantum-Wells
Abstract
Electron tunneling through the barrier in asymmetric double-quantum-well structures is investigated by time-resolved picosecond luminescence spectroscopy. Change from nonresonant to resonant tunneling is achieved with a perpendicular electric field. Energetic alignment of electron subbands in the two wells strongly enhances tunneling transfer rates. The resonant transfer times decrease strongly with barrier thickness. The wells are coupled at resonance by energy-conserving scattering processes between states localized in a single well. The buildup of delocalized coherent states at resonance would lead to much shorter transfer times.
Author(s)
Alexander, M.G.W.
Nido, M.
Rühle, W.W.
Köhler, Klaus  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
Physical Review. B  
DOI
10.1103/PhysRevB.41.12295
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • coupled quantum wells

  • gekoppelte Quantum Wells

  • III-V Halbleiter

  • III-V semiconductors

  • quantum wells

  • time resolved photoluminescence

  • tunneling

  • tunneln

  • zeitaufgelöste Photolumineszenz

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