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  4. Deep-level characterization of GaN-on-GaN current aperture vertical electron transistors
 
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2021
Conference Paper
Titel

Deep-level characterization of GaN-on-GaN current aperture vertical electron transistors

Abstract
In this work, the deep-level trapping behaviour of GaN-on-GaN current aperture vertical electron transistors (CAVETs) is characterised by means of current transient measurements and compared to AlGaN/GaN high-electron mobilityt ransistors (HEMTs) fabricated on the same wafer. To the best of our knowledge, this represents the first analysis of deep-leveltraps in a GaN-based CAVET. In both structures, a single deeplevel with an activation energy of (1.086 ± 0.015) eV (CAVET)and (0.812 ± 0.032) eV (HEMT) is found to dominate the observed transient responses.
Author(s)
Dammann, Michael
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Doering, Philipp
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Driad, Rachid
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Mikulla, Michael
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Quay, Rüdiger
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Sinnwell, Matthias orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF
Hauptwerk
IEEE 8th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2021. Virtual Proceedings
Konferenz
Workshop on Wide Bandgap Power Devices and Applications (WiPDA) 2021
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DOI
10.1109/WiPDA49284.2021.9645137
Language
English
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Fraunhofer-Institut für Angewandte Festkörperphysik IAF
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