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  4. Normally-off quasi-vertical GaN FinFET on SiC substrate with record small-signal current gain of f(t)=10.2 GHz
 
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2023
Conference Paper
Title

Normally-off quasi-vertical GaN FinFET on SiC substrate with record small-signal current gain of f(t)=10.2 GHz

Abstract
Among the vertical GaN transistors, the FinFET is an unipolar device which therefore neither needs p-type doping nor regrowth processes [1]. Large area devices with currents of several amperes and high breakdown voltages beyond 1 kV were presented [2], [3]. So far, the FinFET has been investigated as high-power device and only little interest has been given to his potential as high-frequency transistor [4], [5]. Although normally-off FinFETs were realized on expensive bulk GaN substrates, the sole normally-off FinFET on foreign substrate relied on an introduction of p-GaN, thereby relinquishing the unipolar nature of the FinFET and suffering from the low mobility in the p-channel [6]. In this work, we demonstrate the first normally-off quasi-vertical FinFET on SiC substrate with an analysis of its small-signal performance.
Author(s)
Sinnwell, Matthias  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Dammann, Michael  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Driad, Rachid  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Krause, Sebastian  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Leone, Stefano  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mikulla, Michael  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Quay, Rüdiger  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Mainwork
Device Research Conference, DRC 2023  
Conference
Device Research Conference 2023  
DOI
10.1109/DRC58590.2023.10187017
Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
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