1995
Conference Paper
Title

GaInP/InGaAs MODFETs on GaAs grown by OMVPE for high frequency and power applications

Other Title
MOCVD GaIP/InGaAs -MODFETs auf GaAs-Substrat für Hochfrequenz- und Leistungsanwendungen
Abstract
GaxIn1-xP/InyGa1-yAs/GaAs MODFETs with a pseudomorphic barrier and a pseudomorphic channel were grown by OMVPE. This Al-free material system is the most promising material system for advanced MODFETs on GaAs for high frequency and power applications. Record 2DEG carrier densities of 3.1 10high12 cmhigh-2 for single sided MODFET were measured. 0.25 mym device yield 0.45 W/mm rf power.
Author(s)
Pereiaslavets, B.
Bachem, K.
Braunstein, J.
Eastman, L.F.
Mainwork
Conference
Language
English
Keyword(s)