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  4. A >120-GHz Bandwidth, > 20-dBm P(out), < 6-dB Noise-Figure Distributed Amplifier MMIC in a GaN-on-SiC HEMT Technology
 
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2024
Journal Article
Title

A >120-GHz Bandwidth, > 20-dBm P(out), < 6-dB Noise-Figure Distributed Amplifier MMIC in a GaN-on-SiC HEMT Technology

Abstract
This article demonstrates a distributed amplifier (DA) monolithic microwave integrated circuit (MMIC) with a 3 S 21 bandwidth (BW) of range-phrase = -2129fabricated in a gallium nitride (GaN) HEMT technology. Furthermore, the article investigates the prediction of the third-order intermodulation point (IP3) on device and DA level based on dc I - V measurements and compares two analytical approaches. The equations can be used as well as a design tool before the actual circuit design. The DA consists of eight cells based on common-source transistors with an average S₂₁ of 6.7. Within a frequency range from 2110, the measured output-referred 1compression point and saturated output power are between range-phrase = -17.920.2and range-phrase = -20.622, respectively. This is the first demonstration of an amplifier MMIC with an output power of more than 20over a 100BW. Up to 70, the measured output-referred IP3 is between 26.8 and 29.8 dBm. In addition to state-of-the-art large-signal performance, the DA exhibits also an excellent noise figure (NF) with values between 3.1 and 5.7 dB (range-phrase = -2110).
Author(s)
Thome, Fabian  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Brückner, Peter  
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Quay, Rüdiger  orcid-logo
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Journal
IEEE transactions on microwave theory and techniques  
Open Access
File(s)
Download (11.33 MB)
Rights
CC BY 4.0: Creative Commons Attribution
DOI
10.1109/TMTT.2024.3385713
10.24406/h-478069
Additional full text version
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Language
English
Fraunhofer-Institut für Angewandte Festkörperphysik IAF  
Keyword(s)
  • distributed amplifiers (DAs)

  • distributed power amplifiers (DPAs)

  • gallium nitride (GaN)

  • high-electron-mobility transistors (HEMTs)

  • low-noise amplifiers (LNAs)

  • millimeter wave (mmW)

  • monolithic microwave integrated circuits (MMICs)

  • power amplifiers (PAs)

  • Silicon Carbide (SiC)

  • traveling-wave amplifiers (TWAs)

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