GaSb-based semiconductor disk lasers for the 2-3 µm wavelength range. Versatile lasers for high-power and narrow linewidth emission
Abstract
Highly efficient GaSb-based semiconductor-disk-lasers in the 1.9-2.8µm range have been fabricated. they reach output powers > 3W in CW-operation at room temperature. By using intracavity filters, single-frequency emission with a linewidth below 2.3 MHz was achieved.
