FET-based frequency multiplier S-MMICs up to 440GHz

We report on the design and performance of frequency multiplier submillimeter-wave monolithic integrated circuits (S-MMICs) that operate up to 440 GHz. The S-MMICs are based on state-of-the-art metamorphic high electron mobility transistor technology (mHEMT) with gate lengths down to 35nm and cutooff frequencies f_T and f_max of 515 and 900 GHz, respectively. A class-B FET doubler circuit achieves -14.6dBm of output power at 400 GHz, when driven with 2.5dBm input power. An overview of mHEMT-based frequency multiplier performance in the entire millimeter-wave range is given.