Ein thermoelektrischer Infrarotsensor als Beispiel für den Einsatz von SIMOX-Substraten für die Herstellung von Sensoren und Mikrosystemen

We report on the application of SIMOX wafers (Separation by Implanted Oxygen) on sensor technologies. Examples for sensors based on the SIMOX technology are presented. A description of a thermoelectric infrared sensor (thermopile) fabricated in CMOS technology is given. The thermocouples are made by boron doped monocrystalline silicon and aluminium. Thermopile responsivity and time constant depend on the membrane thickness. Using SIMOX membranes an enhanced responsivity of 150 V/W and a time constant of 25 ms were achieved. Fast IR-sensors with a responsivity of 18 V/W and a time constant of 3 ms were produced on 5 mym thick, epitaxially grown silicon membranes. In order to build a fully CMOS compatible infrared sensor system an absorber made in CMOS technology was developed. The fabrication and the properties of this absorber are presented, too.