Photo- and electroluminescence investigation of rare earth ions in III-V semiconductors

Sharply structured photoluminescence bands were observed in the III-V semi-conductors InP, GaP, and GaAs doped with the rare earth (4fn)-ions Yb, Er, Nd and Pr. These emission bands in the near infrared spectral regino are due to internal 4f-4f transitions of trivalent (4fn)-ions. Zeeman measurements, optically detected magnetic resonance, electron spin resonance and photoluminescence excitation measurements were performed to determine the structure of the (4fn)-centers and to separate different rare earth complexes. The characteristic intra 4f-shell transitions could also be excited electrically in 4f-doped pn-diodes and laser diodes giving rise to incoherent and coherent radiation around 1.0 mym and 1.54 mym. (IAF)