Advanced high electron concentration GaAs/AlxGa1-xAs pulse-doped double heterostructure for device application

Pulse-doped GaAs/Al sub x Ga sub 1-x As double heterostructures designed for high electron mobility transistor devices with high current capability have been grown by molecular beam epitaxy. The thickness of the active GaAs channel placed between the adjacent Al sub x Ga sub 1-x As barrier layers has been chosen sufficiently small to ensure the formation of only one two-dimensional electron gas. For properly adjusted doping levels within both Al sub x Ga 1-x As barrier layers, high sheet carrier densities of 1.8x10 high 12 cm high -2 combined with electron mobilities as high as (7000-8000) square centimetre/Vs at room temperature have been obtained. The most important feature to achieve the combination of the electrical data is the suppression of Si segregation, by choosing an optimized growth temperature of 500 degree C.